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IRF6613
Static @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Conditions
BV DSS
Drain-to-Source Breakdown Voltage
40
–––
–––
V
V GS = 0V, I D = 250μA
?Β V DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
38
–––
mV/°C Reference to 25°C, I D = 1mA
R DS(on)
Static Drain-to-Source On-Resistance
–––
2.6
3.4
m ?
V GS = 10V, I D = 23A e
–––
3.1
4.1
V GS = 4.5V, I D = 18A e
V GS(th)
? V GS(th) / ? T J
I DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
-5.8
–––
2.25
–––
1.0
V
mV/°C
μA
V DS = V GS , I D = 250μA
V DS = 32V, V GS = 0V
–––
–––
150
V DS = 32V, V GS = 0V, T J = 125°C
I GSS
gfs
Q g
Q gs1
Q gs2
Q gd
Q godr
Q sw
Q oss
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q gs2 + Q gd )
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
93
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
42
11.5
3.3
12.6
14.6
15.9
22
18
47
27
4.9
5950
990
460
100
-100
–––
63
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nA
S
nC
nC
ns
pF
V GS = 20V
V GS = -20V
V DS = 15V, I D = 18A
V DS = 20V
V GS = 4.5V
I D = 18A
See Fig. 6 and 16
V DS = 16V, V GS = 0V
V DD = 16V, V GS = 4.5V e
I D = 18A
Clamped Inductive Load
V GS = 0V
V DS = 15V
? = 1.0MHz
Diode Characteristics
Parameter
Min.
Typ. Max. Units
Conditions
I S
Continuous Source Current
–––
–––
110
MOSFET symbol
D
(Body Diode)
A
showing the
I SM
Pulsed Source Current
–––
–––
180
integral reverse
G
S
(Body Diode)
c
p-n junction diode.
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
38
42
1.0
57
63
V
ns
nC
T J = 25°C, I S = 18A, V GS = 0V e
T J = 25°C, I F = 18A
di/dt = 100A/μs e
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature.
? Starting T J = 25°C, L = 1.2mH,
R G = 25 ? , I AS = 18A.
? Pulse width ≤ 400μs; duty cycle ≤ 2%.
? Surface mounted on 1 in. square Cu board.
2
? Used double sided cooling, mounting pad.
? Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
? T C measured with thermal couple mounted to top (Drain) of
part.
? R θ is measured at T J of approximately 90°C.
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